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首页 > 元器件分类 > 分离式半导体产品 > FET - 阵列 A开头
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型号 品牌 封装 数量 描述 参数 PDF资料
ALD1101APAL Advanced Linear Devices Inc 8-DIP(0.300",7.62mm) 82 MOSFET 2N-CH 13.2V 40MA 8PDIP FET 型:2 N 沟道(双)配对 FET 特点:标准 漏极至源极电压(Vdss...
ALD1101ASAL Advanced Linear Devices Inc 8-SOIC(0.154",3.90mm 宽) 81 MOSFET 2N-CH 13.2V 40MA 8SOIC FET 型:2 N 沟道(双)配对 FET 特点:标准 漏极至源极电压(Vdss...
ALD1101BPAL Advanced Linear Devices Inc 8-DIP(0.300",7.62mm) MOSFET 2N-CH 13.2V 40MA 8PDIP FET 型:2 N 沟道(双)配对 FET 特点:标准 漏极至源极电压(Vdss...
ALD1101PAL Advanced Linear Devices Inc 8-DIP(0.300",7.62mm) 67 MOSFET 2N-CH 13.2V 40MA 8PDIP FET 型:2 N 沟道(双)配对 FET 特点:标准 漏极至源极电压(Vdss...
ALD1101SAL Advanced Linear Devices Inc 8-SOIC(0.154",3.90mm 宽) 87 MOSFET 2N-CH 13.2V 40MA 8SOIC FET 型:2 N 沟道(双)配对 FET 特点:标准 漏极至源极电压(Vdss...
ALD1102APAL Advanced Linear Devices Inc 8-DIP(0.300",7.62mm) 96 MOSFET 2P-CH 13.2V 16MA 8PDIP FET 型:2 P 沟道(双)配对 FET 特点:标准 漏极至源极电压(Vdss...
ALD1102ASAL Advanced Linear Devices Inc 8-SOIC(0.154",3.90mm 宽) 176 MOSFET 2P-CH 13.2V 16MA 8SOIC FET 型:2 P 沟道(双)配对 FET 特点:标准 漏极至源极电压(Vdss...
ALD1102BPAL Advanced Linear Devices Inc 8-DIP(0.300",7.62mm) MOSFET 2P-CH 13.2V 16MA 8PDIP FET 型:2 P 沟道(双)配对 FET 特点:标准 漏极至源极电压(Vdss...
ALD1102PAL Advanced Linear Devices Inc 8-DIP(0.300",7.62mm) 103 MOSFET 2P-CH 13.2V 16MA 8PDIP FET 型:2 P 沟道(双)配对 FET 特点:标准 漏极至源极电压(Vdss...
ALD1102SAL Advanced Linear Devices Inc 8-SOIC(0.154",3.90mm 宽) 47 MOSFET 2P-CH 13.2V 16MA 8SOIC FET 型:2 P 沟道(双)配对 FET 特点:标准 漏极至源极电压(Vdss...
ALD1103PBL Advanced Linear Devices Inc 14-DIP(0.300",7.62mm) 101 MOSFET 2N+2P 13.2V 14PDIP FET 型:2 N 和 2 P 沟道(双)配对 FET 特点:标准 漏极至源极电...
ALD1103SBL Advanced Linear Devices Inc 14-SOIC(0.154",3.90mm 宽) 14 MOSFET 2N+2P 13.2V 14-SOIC FET 型:2 N 和 2 P 沟道(双)配对 FET 特点:标准 漏极至源极电...
ALD1105PBL Advanced Linear Devices Inc 14-DIP(0.300",7.62mm) 34 MOSFET 2N+2P 13.2V 14PDIP FET 型:2 N 和 2 P 沟道(双)配对 FET 特点:标准 漏极至源极电...
ALD1105SBL Advanced Linear Devices Inc 14-SOIC(0.154",3.90mm 宽) 62 MOSFET 2N+2P 13.2V 14-SOIC FET 型:2 N 和 2 P 沟道(双)配对 FET 特点:标准 漏极至源极电...
ALD1106PBL Advanced Linear Devices Inc 14-DIP(0.300",7.62mm) 576 MOSFET 4N-CH 13.2V QUAD 14PDIP FET 型:4 N 沟道,配对 FET 特点:标准 漏极至源极电压(Vdss):...
ALD1106SBL Advanced Linear Devices Inc 14-SOIC(0.154",3.90mm 宽) 233 MOSFET 4N-CH 13.2V QUAD 14SOIC FET 型:4 N 沟道,配对 FET 特点:标准 漏极至源极电压(Vdss):...
ALD1107PBL Advanced Linear Devices Inc 14-DIP(0.300",7.62mm) 521 MOSFET 4P-CH 13.2V QUAD 14PDIP FET 型:4 P 沟道,配对 FET 特点:标准 漏极至源极电压(Vdss):...
ALD1107SBL Advanced Linear Devices Inc 14-SOIC(0.154",3.90mm 宽) 116 MOSFET 4P-CH 13.2V QUAD 14SOIC FET 型:4 P 沟道,配对 FET 特点:标准 漏极至源极电压(Vdss):...
ALD110800APCL Advanced Linear Devices Inc 16-DIP(0.300",7.62mm) 20 MOSFET N-CH 10.6V QUAD 16PDIP FET 型:4 N 沟道,配对 FET 特点:标准 漏极至源极电压(Vdss):...
ALD110800ASCL Advanced Linear Devices Inc 16-SOIC(0.154",3.90mm 宽) 15 MOSFET N-CH 10.6V QUAD 16SOIC FET 型:4 N 沟道,配对 FET 特点:标准 漏极至源极电压(Vdss):...

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